vs-15eth06pbf, VS-15ETH06-N3, vs-15eth06fppbf, vs-15eth06fp-n3 www.vishay.com vishay semiconductors revision: 13-may-16 1 document number: 94002 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 15 a fred pt ? features ? hyperfast recovery time ? low forward voltage drop ? 175 c operating junction temperature ? low leakage current ? single die center tap module ? fully isolated package (v ins = 2500 v rms ) ? ul e78996 approved ? designed and qualified according to jedec ? -jesd 47 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description / applications state of the art hyperfast recove ry rectifiers designed with optimized performance of forw ard voltage drop, hyperfast recovery time, and soft recovery. the planar structure and the plat inum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in pfc boost stage in the ac/dc section of smps, inverters or as freewheeling diodes. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package to-220ac, to-220fp i f(av) 15 a v r 600 v v f at i f 1.3 v t rr typ. 22 ns t j max. 175 c diode variation single die to-220ac 1 2 3 to-220 full-pak 1 2 3 anode 1 3 cathode base cathode 2 2 anode 1 3 cathode vs-15eth06pbf vs-15eth06fppbf VS-15ETH06-N3 vs-15eth06fp-n3 available absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 600 v average rectified forward current i f(av) t c = 140 c 15 a t c = 80 c (full-pak) non-repetitive peak surge current i fsm t j = 25 c 120 t j = 25 c (full-pak) 180 peak repetitive forward current i fm 30 operating junction and storage temperatures t j , t stg -65 to +175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 15 a - 1.8 2.2 i f = 15 a, t j = 150 c - 1.3 1.6 reverse leakage current i r v r = v r rated - 0.2 50 a t j = 150 c, v r = v r rated - 30 500 junction capacitance c t v r = 600 v - 20 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
vs-15eth06pbf, VS-15ETH06-N3, vs-15eth06fppbf, vs-15eth06fp-n3 www.vishay.com vishay semiconductors revision: 13-may-16 2 document number: 94002 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage dynamic recovery characteristics (t c = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 100 a/s, v r = 30 v - 22 30 ns i f = 15 a, di f /dt = 100 a/s, v r = 30 v - 28 35 t j = 25 c i f = 15 a di f /dt = 200 a/s v r = 390 v -29- t j = 125 c - 75 - peak recovery current i rrm t j = 25 c - 3.5 - a t j = 125 c - 7 - reverse recovery charge q rr t j = 25 c - 57 - nc t j = 125 c - 300 - reverse recovery time t rr t j = 125 c i f = 15 a di f /dt = 800 a/s v r = 390 v -51-ns peak recovery current i rrm -20- a reverse recovery charge q rr - 580 - nc thermal mechanical specifications parameter symbol test conditi ons min. typ. max. units maximum junction and storage temperature range t j , t stg -65 - 175 c thermal resistance, junction to case r thjc -1.01.3 c/w (full-pak) - 3.0 3.5 thermal resistance, junction to ambient per leg r thja typical socket mount - - 70 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.5- weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-220ac 15eth06 case style to-220 full-pak 15eth06fp 100 10 1 0.5 1.0 1.5 2.0 2.5 3.0 i f - instantaneous forward current (a) v f - forward voltage drop (v) t j = 175 c t j = 150 c t j = 25 c 0 100 200 300 400 500 600 i r - reverse current (a) v r - reverse voltage (v) 0.001 0 0.01 0.1 1 10 100 1000 t j = 100 c t j = 175 c t j = 150 c t j = 125 c t j = 25 c
vs-15eth06pbf, VS-15ETH06-N3, vs-15eth06fppbf, vs-15eth06fp-n3 www.vishay.com vishay semiconductors revision: 13-may-16 3 document number: 94002 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics fig. 5 - maximum thermal impedance z thjc characteristics (full-pak) c t - junction capacitance (pf) 1000 100 100 200 300 400 500 600 0 10 v r - reverse voltage (v) t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single pulse (thermal resistance) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 10 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single pulse (thermal resistance) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 10 100 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
vs-15eth06pbf, VS-15ETH06-N3, vs-15eth06fppbf, vs-15eth06fp-n3 www.vishay.com vishay semiconductors revision: 13-may-16 4 document number: 94002 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 6 - maximum allowable case temperature vs. average forward current fig. 7 - maximum allowable case temperature vs. average forward current (full-pak) fig. 8 - forward power loss characteristics fig. 9 - typical reverse recovery time vs. di f /dt fig. 10 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 8); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 0 5 10 15 20 25 allowable case temperature (c) i f(av) - average forward current (a) 120 130 140 150 160 170 180 see note (1) square wave (d = 0.50) 80 % rated v r applied 110 dc 0 4 8 12 20 24 allowable case temperature (c) i f(av) - average forward current (a) 20 40 80 100 140 160 180 see note (1) square wave (d = 0.50) 80 % rated v r applied 0 dc 16 180 120 60 0 5 10 15 20 25 average power loss (w) i f(av) - average forward current (a) 0 5 10 15 20 25 30 35 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc rms limit 100 0 100 1000 t rr (ns) di f /dt (a/s) 20 40 60 80 i f = 30 a i f = 15 a v r = 390 v t j = 125 c t j = 25 c 1000 0 100 1000 q rr (nc) di f /dt (a/s) 200 400 600 800 i f = 30 a i f = 15 a v r = 390 v t j = 125 c t j = 25 c
vs-15eth06pbf, VS-15ETH06-N3, vs-15eth06fppbf, vs-15eth06fp-n3 www.vishay.com vishay semiconductors revision: 13-may-16 5 document number: 94002 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - reverse recovery parameter test circuit fig. 12 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
vs-15eth06pbf, VS-15ETH06-N3, vs-15eth06fppbf, vs-15eth06fp-n3 www.vishay.com vishay semiconductors revision: 13-may-16 6 document number: 94002 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity pack aging description vs-15eth06pbf 50 1000 antistatic plastic tube VS-15ETH06-N3 50 1000 antistatic plastic tube vs-15eth06fppbf 50 1000 ant istatic plastic tube vs-15eth06fp-n3 50 1000 ant istatic plastic tube links to related documents dimensions to-220ac www.vishay.com/doc?95221 to-220fp www.vishay.com/doc?95005 part marking information to-220acpbf www.vishay.com/doc?95224 to-220ac-n3 www.vishay.com/doc?95068 to-220fppbf www.vishay.com/doc?95009 to-220fp-n3 www.vishay.com/doc?95440 1 - vishay semiconductors product 2 - current rating (15 = 15 a) 3 - e = single diode 4 - t = to-220, d 2 pak 5 - h = hyperfast recovery 6 - voltage rating (06 = 600 v) 7 - none = to-220ac fp = to-220 full-pak 8 device code 5 1 3 2 4 6 7 8 vs- 15 e t h 06 fp pbf pbf = lead (pb)-free and rohs-compliant - environmental digit: -n3 = halogen-free, rohs-compliant and totally lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 20-jul-11 1 document number: 95005 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters 5 0.5 3.3 3.1 5 0.5 0.9 0.7 2.54 typ. 2.54 typ. 10.6 10.4 3.7 3.2 7.31 6.91 0.61 0.38 2.85 2.65 2.8 2.6 1.4 1.3 10 4.8 4.6 16.0 15.8 16.4 15.4 (2 places) r 0.7 r 0.5 hole ? 3.4 3.1 typ. 1.15 1.05 13.56 13.05 lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220 full-pak
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
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